PART |
Description |
Maker |
IRF7526D1 IRF7526D1TR |
Co-packaged HEXFETò Power MOSFET and Schottky Diode FETKYMOSFET & Schottky Diode(Vdss=-30V, Rds(on)=0.20ohm, Schottky Vf=0.39V) FETKY⑩MOSFET FETKY MOSFET & Schottky Diode(Vdss=-30V Rds(on)=0.20ohm Schottky Vf=0.39V) FETKY MOSFET & Schottky Diode(Vdss=-30V, Rds(on)=0.20ohm, Schottky Vf=0.39V) FETKY⑩ MOSFET & Schottky Diode(Vdss=-30V, Rds(on)=0.20ohm, Schottky Vf=0.39V)
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International Rectifier, Corp. IRF[International Rectifier]
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IRF7322D1 |
MOSFET Schottky Diode ( VDSS = -20V , RDS(on) = 0.058W , Schottky Vf = 0.39V ) FETKY? MOSFET / Schottky Diode
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International Rectifier
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FDFMA2P85308 FDFMA2P853 |
-20V Integrated P-Channel PowerTrenchMOSFET and Schottky Diode Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode Integrated P-Channel PowerTrench庐 MOSFET and Schottky Diode Integrated P-Channel PowerTrench? MOSFET and Schottky Diode
|
Fairchild Semiconductor
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FDFMA2N028Z08 FDFMA2N028Z |
20V Integrated N-Channel PowerTrenchMOSFET and Schottky Diode Integrated N-Channel PowerTrench㈢ MOSFET and Schottky Diode 20V, 3.7A, 68mヘ Integrated N-Channel PowerTrench庐 MOSFET and Schottky Diode 20V, 3.7A, 68m惟 Integrated N-Channel PowerTrench? MOSFET and Schottky Diode 20V, 3.7A, 68mΩ
|
Fairchild Semiconductor
|
NTLJF1103P NTLJF1103PT1G |
Power MOSFET Schottky Diode Power MOSFET and Schottky Diode -8 V, -4.3 A, μCool? P-Channel, with 2.0 A Schottky Barrier Diode, 2 x 2 mm, WDFN
|
ON Semiconductor
|
IRFI830G IRFI830GPBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=500V Rds(on)=1.5ohm Id=3.1A) HEXFET? Power MOSFET Power MOSFET(Vdss=500V/ Rds(on)=1.5ohm/ Id=3.1A) Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=3.1A) 功率MOSFET(减振钢板基本\u003d 500V及的Rdson)\u003d 1.5ohm,身份证\u003d 3.1A
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IRF[International Rectifier] International Rectifier, Corp.
|
IRC840 |
Power MOSFET(Vdss=500V/ Rds(on)=0.85ohm/ Id=8.0A) Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) Hexfet? Power MOSFET Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A) 500V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
|
IRF[International Rectifier]
|
IRF7901D1 IRF7901D1TR |
30V FETKY - MOSFET and Schottky Diode in a SO-8 package Dual FETKY⑩ Co-Packaged Dual MOSFET Plus Schottky Diode Dual FETKY Co-Packaged Dual MOSFET Plus Schottky Diode Dual FETKY?/a> Co-Packaged Dual MOSFET Plus Schottky Diode
|
International Rectifier
|
HSMS-2800 HSMS-2802 HSMS-2803 HSMS-2804 HSMS-280C |
SURFACE MOUNT RF SCHOTTKY BARRIER DIODES HSMS-2802 · Low reverse leakage Schottky diode HSMS-2803 · Low reverse leakage Schottky diode HSMS-2804 · Low reverse leakage Schottky diode HSMS-2805 · Low reverse leakage Schottky diode HSMS-2808 · Low reverse leakage Schottky diode HSMS-280B · Low reverse leakage Schottky diode HSMS-280C · Low reverse leakage Schottky diode HSMS-280E · Low reverse leakage Schottky diode HSMS-280F · Low reverse leakage Schottky diode HSMS-280K · Low reverse leakage Schottky diode HSMS-280L · Low reverse leakage Schottky diode HSMS-280M · Low reverse leakage Schottky diode HSMS-280N · Low reverse leakage Schottky diode HSMS-280R · Low reverse leakage Schottky diode
|
http:// Agilent(Hewlett-Packard) Agilent (Hewlett-Packard)
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IRFR014 IRFU014 IRFR014PBF IRFR014TR IRFR014TRL IR |
60V Single N-Channel HEXFET Power MOSFET in a D-Pak package Power MOSFET(Vdss = 60 V, Rds(on) = 0.20 Ohm, Id= 7.7A) Power MOSFET(Vdss = 60 V, Rds(on) = 0.20 Ohm, Id= 7.7A)
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IRF[International Rectifier]
|
IRF830S IRF830STRL IRF830STRR |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=500V Rds(on)=1.5ohm Id=4.5A) Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A) Power MOSFET(Vdss=500V/ Rds(on)=1.5ohm/ Id=4.5A)
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IRF[International Rectifier]
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IRF9510S IRF9510STRL IRF9510STRR |
-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-100V Rds(on)=1.2ohm Id=-4.0A) Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-4.0A) Power MOSFET(Vdss=-100V/ Rds(on)=1.2ohm/ Id=-4.0A)
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IRF[International Rectifier]
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